Energy-efficient spin injector into semiconductors driven by elastic waves
نویسندگان
چکیده
Generation of spin imbalance in nonmagnetic semiconductors is crucial for the functioning many spintronic devices. An attractive design injectors into based on a pumping from precessing ferromagnet, typically excited by microwave magnetic field leading to high power consumption device. Here we describe theoretically injector with greatly reduced energy losses, which dynamics an elastic wave injected ferromagnet-semiconductor heterostructure. To demonstrate efficient such injector, perform micromagnetoelastic simulations coupled and Ni films Ni/GaAs bilayers. For thick films, it shown that monochromatic acoustic generates same frequency wavelength, propagates over distances several micrometers at excitation frequencies close ferromagnetic resonance. The bilayers thicknesses comparable wavelength development steady-state magnetization precession interface. amplitude has maximum thickness amounting three quarters wave, explained analytical model. Using simulation data obtained interface, evaluate current pumped GaAs calculate accumulation solving diffusion equation. Then electrical signals resulting flow inverse Hall effect are determined via numerical solution Laplace's It amplitudes these ac large enough experimental measurement, indicates acoustically driven GaAs.
منابع مشابه
Spin Injection into Semiconductors
S 713 FRIDAY AFTERNOON, 8 NOVEMBER 2013 PLAZA BALLROOM F, 1:30 TO 4:30 Session HB SPIN INJECTION INTO SEMICONDUCTORS Georg Schmidt, Chair
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ژورنال
عنوان ژورنال: Physical Review Materials
سال: 2021
ISSN: ['2476-0455', '2475-9953']
DOI: https://doi.org/10.1103/physrevmaterials.5.054601